Abstract

The chemical and electronic structure of high-efficiency chalcopyrite thin film solar cell absorbers significantly differs between the surface and the bulk. While it is widely accepted that the absorber surface exhibits a Cu-poor surface phase with increased band gap (E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> ), a direct access to the crucial information of the depth-dependency of E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> is still missing. In this paper, we demonstrate that a combination of x-ray emission and absorption spectroscopy allows a determination of E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> in the surface-near bulk and thus complements the established surface- and bulk-sensitive techniques of E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> determination. As an example, we discuss the determination of E <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> for a Cu(In,Ga)Se <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> absorber and find a value of (1.52 ± 0.20) eV.

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