Abstract
The temperature and pressure dependences of GaAs and AlAs growth rates and the migration lengths across a SiO 2 mask are investigated for selective growth by metalorganic chemical vapor deposition. The GaAs growth rate across a SiO 2 patterned area is strongly influenced by the surface migration of growth species, but the AlAs growth rate is not. It is found that the migration length of GaAs growth species on the SiO 2 mask at 2.0x10 4 Pa is 200 μm at 550°C and increases to 400 μm at 700°C. The migration length of GaAs growth species reduces to one fifth of these values when grown at 1.0x10 5 Pa. The AlAs migration length is two orders of magnitude shorter than that of the GaAs and not dependent on the growth pressure. The large difference in surface migration for GaAs and AlAs can be understood by comparing the calculated free energy changes during the chemical reaction between the growth species and the SiO 2 mask.
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