Abstract
Surface leakage current contribution to the dynamic resistance and 1/ f noise in mid-wave Mercury Cadmium Telluride infrared photodiodes has been investigated by using gate controlled diode structures. It is reported that the behavior of bias dependent dynamic resistance as a function of gate voltage and temperature dependence of zero-bias resistance-area product can be understood by invoking contribution from surface leakage currents that are ohmic in nature. Surface leakage current variations with the variation in gate voltage are also shown to be responsible for the corresponding variations in 1/ f noise.
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