Surface energy of liquid copper and single-crystal sapphire and the wetting behavior of copper on sapphire

Abstract

The wetting behavior of liquid copper on sapphire is affected by the crystallographic orientation of the sapphire surface, the oxygen partial pressure, and the temperature. The influences of each of these conditions have been studied by the sessile drop technique over the oxygen partial pressure range 10-2-10-20 atm at temperatures of 1100 and 1250°C. The effect of oxygen partial pressure on the liquid copper surface energy follows the Gibbs-Langmuir law. The contact angle varies with the crystallographic orientation of the sapphire surface. This variation is more significant at higher oxygen partial pressures, but is eliminated at higher temperatures. The liquid copper surface energy was determined to be γlv = 1.757-3.3 x 10-4T(°C) J/m2. The solid surface energy of sapphire was estimated as γsv = 1.961-4.7x 10-4T(°C) J/m2, which applies only to the temperature range 927-2077°C.