Abstract
Barium hexaferrite thin films were deposited on Si (100) substrates using a radio frequency magnetron sputtering system. The effects of oxygen partial pressure during deposition process on the material characteristics and magnetic properties of BaM thin films were investigated. X-ray diffraction data indicated that with the oxygen partial pressure ratio increasing from 0% to 8%, the diffraction peaks shift slightly towards the larger angles and the corresponding lattice parameters (a and c) decrease. The saturation magnetization (Ms) ranges from 200 to 358kA/m as the oxygen partial pressure ratio is varied from 0% to 8%. These changes are attributed to the different oxidation states of Fe ions in the films with oxygen excess or vacancies. When deposited with 1% oxygen partial pressure, the film possesses the highest saturation magnetization (358kA/m) and exhibits better perpendicular c-axis orientation in comparison with those deposited without oxygen partial pressure or with higher oxygen partial pressure.
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