Abstract
We have used in-situ reflectance difference spectroscopy to observe changes in GaAs(001) surface reconstructions during homoepitaxy. With a constant As4 flux of 5 × 10−6 Torr and growth rates of 1.1 ML/s, the starting (2 × 4) surface exhibits a sudden decrease in the RD signal corresponding to a (3 × 1) reconstruction as simultaneously evidenced by RHEED observations. Furthermore, by varying Ga fluxes so as to control changes in surface reconstructions between c(4 × 4) and (2 × 4), we traced reproducible features that lead us to propose a possible physical origin based on strained islands, induced by surface reconstruction, in order to explain the experimental observations. This last assumption was tested by depositing some atomic layers of InGaAs on a (2 × 4) GaAs (001) where the change in strain is evident. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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