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Abstract
The electron concentration in not-intentionally doped InAs/AlSb quantum wells is found to depend sensitively on the top AlSb barrier thickness even for barriers as thick as 100 nm. The carrier concentration increases as the thickness of this barrier is decreased. The analysis of the dependence of concentration on top barrier thickness indicates that the Fermi level is pinned at the surface of the sample, 850±50 meV below the conduction band edge of the AlSb top layer. Surface donors are the main contribution to the high carrier concentrations in these not-intentionally doped wells.
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