Abstract
The surface diffusion of group III atom incorporation in the MBE of GaAs and InAs is reviewed. First the diffusion length of incorporation on the (001) top surface with the (111)A or (411)A side surfaces of V grooves is discussed. It is shown that the diffusion length takes the same value for both cases and is inversely proportional to the arsenic pressure. The same relationship is also obtained for the diffusion of In in InAs MBE. However, the diffusion length of Ga on (111)B shows an inverse parabolic dependence of the arsenic pressure. It is suggested that on the (001) surface two As 4 molecules meet to give active As atoms for the growth. On the other hand, the behavior of the As 4 molecule on the (111)B surface is still not clear. The ratio of the surface diffusion coefficient on (111)B and that on (001) is calculated. It is found that the ratio takes a value of around 140. With this ratio, the incorporation life times τ inc on (111)B and (001) surfaces are calculated as functions of arsenic pressure. It is found that the lines of the incorporation life time intersect at the arsenic pressure where flow inversion occurs.
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