Abstract
The arsenic pressure dependence of Ga adatom surface diffusion in molecular beam epitaxy (MBE) on nonplanar substrates was investigated. By using in situ scanning microprobe reflection high-energy electron diffraction (µ-RHEED), the distribution of the growth rate of GaAs on the (001) surface near the edge of the (111)A or (111)B sidewall was measured under various arsenic pressures. The surface diffusion length of Ga adatom incorporation on the (001) surface derived from the distribution is on the order of micrometers and it shows a strong dependence on arsenic pressure. A simple model based on one-dimensional surface diffusion was proposed. With this theory, the lifetime of Ga adatom incorporation on other surfaces is obtained.
Published Version
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