Abstract
Molecular dynamics simulations of Ar ion collision on a Si surface using an optimized potential function were carried out in the case of the acceleration voltages of 50keV for Ar ions. A hillock structure was formed by the Ar ion impact on the Si surface. The height of the structure calculated by the simulations corresponded to those of the experiments. The height of the structure was found to be proportional to the fluence of Ar ions. The amorphous structural region was expanded by the progress of the interface region between the amorphous structure and the crystalline structure with increasing the fluence in the depth direction.
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