Abstract
The existence of defects on Si(001) surfaces and their formation as a function of the substrate temperature has been studied with a high-resolution spot profile analysis LEED system. Oscillations are measured in the half widths of the 00, 01, and 11 integral order beams at different annealing temperatures. The experimental results were simulated in a kinematic model by including the diffraction of non-primitive lattices showing that the influence of multiple scattering can be neglected. We observe the coexistence of monoatomic, diatomic, and up to six-atomic multiple steps. The formation of (113) facets is observed which are stabilized by a (3×1) reconstruction at temperatures above 1200 K. Their formation can be understood by coagulation of hitherto separated monoatomic and diatomic steps. These facets disappear again for annealing temperatures above 1500 K. Ideal (001) surfaces with terraces wider than 100 nm are obtained when the samples are flashed initially to above 1500 K. In this high temperature range exclusively monoatomic steps were observed.
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