Abstract
The stability ranges of monatomic and diatomic steps on the Si(001) surface are determined by high-resolution spot-profile analysis of low-energy diffracted electrons. Diatomic steps are predominantly observed at temperatures below 1200 K. With increasing annealing temperature the steps coagulate and we identify (113) facets stabilized by a (3\ifmmode\times\else\texttimes\fi{}1) reconstruction. These facets are stable above 1200 K, and up to 1450 K. Annealing to higher temperatures results in the formation of monatomic steps with a terrace width above the experimental coherence length.
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