Abstract
Surface and bulk sensitive Si2p and Ga3d photoelectron spectra have been measured for the Si(111)√3 × √3-Ga surface. Only a single surface Si2p component and a single Ga3d component are found for the √3 × √3-Ga surface from a nonlinear least-squares analysis. These findings are consistent with the threefold-hollow 1 3 ML adatom models proposed for the √3 × √3-Group III metal surfaces.
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