Abstract
Thermal stability of Gd 2 O 3 /Si(100) interfacial transition layer was studied by analyzing the angle-resolved Si 2p and Gd 4d photoelectron spectra. Following results were obtained: The compositional depth profile of Gd 2 O 3 /Si(100) changed slightly by post deposition annealing (PDA) in nitrogen gas under atmospheric pressure below 300°C. The analyses of 0 Is and Si 2p spectra indicated that the Gd-silicate consisting of Gd-O-Si bonds was produced near the Gd 2 O 3 /Si(100) interface without annealing and the amount of Gd-silicate increased by PDA above 400°C.
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