Abstract
Surface conductive layers (SCL) on oxidized (111) diamonds with smooth surfaces after exposure to air were detected and characterized by Hall effect measurements. Hall effect measurements show that the conductivity is p type with sheet hole concentrations around of 1012cm−2 and Hall mobilities between 5 and 130cm2∕Vs. The SCL vanishes by thermal annealing at a temperature higher than 460K in He atmosphere, and recovers in air. These characteristics are similar to those generated by hydrogen termination. The experiments revealed that these SCLs are present on boron doped (111) and undoped (111) diamond films with smooth surfaces and natural IIa (111) diamonds, but not on (111) diamond films with rough surfaces and not on (100) diamonds.
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