Abstract
We have carried out an experimental study of the surface composition and structural changes of GaAs under Ar+ ion sputtering using Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED). The Auger results show that preferential sputtering of As atoms takes place in the GaAs compound and that such a composition change with depth occurs in a simple exponential form with Ga enrichment on the top surface layer. The grown surface undergoes a C(4×4) reconstruction, and after Ar+ ion sputtering this GaAs(001)–C(4×4) structure disappears resulting in an amorphous halo. But the characteristic surface which has a superlattice of (011) on GaAs (001) was found after sputtering and postannealing.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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