Abstract
In this article, we present our results on gallium nitride (GaN) films grown by chemical beam epitaxy (CBE) using triethyl gallium (TEG) and ammonia (NH3), on Al2O3(0001) substrates. In situ characterization of the GaN surface was performed by reflection high energy electron diffraction and time-of-flight mass spectroscopy of recoil ions. In order to initiate the growth, a 200 Å thick buffer layer was grown using electron cyclotron resonance plasma activated nitrogen and TEG. During CBE growth of GaN, growth rates were in the range of 1000–4000 Å/h limited only by the pumping capacity of the growth reactor. It is only in a narrow temperature window of 800–825 °C that two-dimensional smooth single crystal layers are obtained. A clear correlation between crystal quality and surface carbon was observed. GaN films grown at 800 °C consist of hexagonal hillocks less than 1 μm in size with surface root mean square roughness of 40 Å/1 μm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.