Abstract
Gallium nitride (GaN) films were deposited on stainless steel substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD), with trimethyl gallium (TMGa) and N2 applied as the precursors of Ga and N, respectively. The effect of growth temperature on the characteristics of GaN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), room temperature photoluminescence (PL), and scanning electron microscope (SEM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on stainless substrates under optimized deposition temperature of 400°C. In addition, the approximate Ohmic contact behavior between GaN film and stainless steel substrate was clearly demonstrated by the current-voltage (I–V) dependence.
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