Abstract
This work reports on the detailed analysis of the temperature-dependent electrical parameters of the ZnO/6H-SiC barrier diodes. The effect of light on the diode current was also examined. It was found that the diode showed low sensitivity to light. No remarkable change in diode characteristics were observed at room temperature. The structure has a high rectification ratio of 1.096×104 at ±2V with ideality factor of 2.46 at room temperature. The rectification ratio (RR) decreases with increasing temperature, as agree to other heterojunction structures. Some diode parameters such as zero-bias barrier height and ideality factor as temperature-dependent were calculated on the basis of the thermionic emission (TE) theory, by considering a Gaussian distribution (GD).
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