Abstract
A photopolymer based Al/Norland Optical Adhesive 60 (NOA60)/p-Si MPS (metal-polymer-semiconductor) device was fabricated by a combination of vacuum evaporation and smear technique. The current transport properties of the device were investigated by using the forward bias current–voltage (I-V) characteristic in the temperature range of 80–300 K. The cross-sectional structure of polymer/semiconductor was revealed by the scanning electron microscope (SEM) image and it was seen that the NOA60 photopolymer was tidily coated on the p-Si surface. According to the I-V measurements at room temperature, the MPS device exhibits a good rectification ratio of 8140 at ± 1 V. The temperature-dependent I-V measurements (I-V-T) were analyzed based on the thermionic emission (TE) theory and an abnormal increase in zero-bias barrier height (BH) and a decrease in ideality factor (n) was observed with increasing temperature. Additionally, two different linear regions with distinct values from the theoretical value of the Richardson constant (A*) were observed in the conventional Richardson plot. Such deviations from the ideal TE theory have been attributed to the effect of BH inhomogeneities. Gaussian distribution (GD) of the BH model has applied the I-V-T results and the double GD BH with mean values of 0.75 ± 0.08 eV (80–140 K) and 1.02 ± 0.11 eV (140–300 K) were calculated. Moreover, the A* value of 31.4 A/cm2K2 was calculated close to the known value of p-Si from the modified Richardson plot. Thus, it has been concluded that the current transport of the Al/NOA60/p-Si MPS device can be explained by TE with a double GD BH model for a wide temperature region.
Highlights
Radiation curing is an important technology, especially for coatings
In the first region (80 -120 K) homogeneous barrier height was calculated as 0.79 eV from extrapolation of Φb0-n plot to n=1. This value was determined as 1.02 eV in the high temperature region (T>120K). These results indicate that lateral inhomogeneities are effective in the MPS device and the dominant current transport mechanism starts to deviate the ideal thermionic emission (TE) model with decreasing temperature [26, 42]
The results show that the ideality factor expresses the voltage deformation of the Gaussian distribution (GD) barrier height (BH)
Summary
Radiation curing is an important technology, especially for coatings. In contrast to conventional methods of radiation curing, no need for any evaporation and solvent. UV polymerization is currently the most used technique for radiation curing. In this method, a light-sensitive molecule named a photoinitiator is used. In recent years, MPS devices, in which polymer and similar organic materials are used as an insulating layer, have attracted attention due to their production advantages and cost reduction [9,10,11,12,13,14,15]. A p-Si-based MPS device was produced using the UV-curable NOA60 photopolymer material of Norland Optics. The main motivation for the preparation of this device is the possibility of simplifying the production methods and reducing the cost by using the optically transparent coating and interface material from the same material. I-V measurements were made in the temperature range of 80-300 K, and the effective current transmission mechanism and the factors affecting it were tried to be determined
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