Abstract
The structures of the non-stoichiometric titanium nitride films (TiN x , 0.5⩽ x⩽1.1) prepared by DC reactive magnetron sputtering at different nitrogen partial pressures (N 2/Ar gas ratio) have been investigated. We focus our attention on the surface properties of over-stoichiometric TiN x film particularly. The effects of nitrogen partial pressures on the properties of titanium nitride films deposited on (1 0 0)Si substrates were investigated with a variety of techniques, including X-ray diffractometry, X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and scanning electron microscopy. The resistivity, surface roughness, and crystallographic orientation of as-deposited TiN x films depend on the nitrogen partial pressure during reactive sputtering deposition. The surface properties of over-stoichiometric TiN x film can be obtained by detailed interpretation of XPS spectra for Ti 2p and N 1s.
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