Abstract
NdF 3 layers were grown on Si(1 1 1) substrates at 400, 550 and 700°C by molecular beam epitaxy. Investigation by reflection high-energy electron diffraction (RHEED) in situ showed that the NdF 3 layers had good crystalline quality. The orientational relationship between NdF 3 layers and Si(1 1 1) substrates was confirmed to be NdF 3(0 0 0 2) 1 1 2 ̄ 0 ‖ Si(1 1 1) 1 1 ̄ 0 by X-ray rocking curve (XRC) analysis. The morphology of NdF 3 layers and insights into their growth mechanism were obtained by atomic force microscopy (AFM). The flatness of the epitaxial layers and the microcracks due to mismatch of thermal expansion coefficient are discussed as a function of growth temperature, layer thickness, and size of scanned area.
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