Abstract
In this article, we report the results obtained from a study carried out on the inductively coupled plasma (ICP) etching of poly-monochloro-para-xylylene (parylene-C) thin films using an O 2/CF 4 gas mixture. The effects of adding CF 4 to the O 2 plasma on the etch rates were investigated. As the CF 4 gas fraction increases up to approximately 16%, the polymer etch rate increases in the range of 277–373 nm/min. In this work, the atomic force microscopy (AFM) analysis indicated that the surface roughness was reduced by the addition of CF 4 to the O 2 plasma. Contact angle measurements showed that the surface energy decreases with increasing CF 4 fraction. At the same time, X-ray photoelectron spectroscopy (XPS) demonstrated the increase in the relative F atomic content on the surface.
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