Abstract
The etch process of the Bi0.5(Na0.82K0.18)0.5TiO3(BNKT) thin films were performed in BCl3/Ar plasma. We investigated the etching characteristics of BNKT thin films and the selectivity of BNKT to SiO2 in inductively coupled plasma (ICP) system. The best etch rate of BNKT thin films was 27.8 nm/min in BCl3/Ar (4:16 sccm) plasma. In addition, the etch rate was investigated as functions of the gas mixing ratio, RF power, DC-bias voltage, and process pressure. From the x-ray photoelectron spectroscopy (XPS) data analysis, we were assumed that the byproducts were generated on the surface of the BNKT thin films during etching process. The surface morphology of the BNKT thin films was observed by atomic force microscopy (AFM). We determined the ionic composition of BCl3/Ar plasma using optical emission spectroscopy (OES).
Published Version
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