Abstract
The deposition behavior for Ni thin film growth on Al substrates of various orientations according to the incident energy of adatoms was investigated by molecular dynamics simulation. In spite of the low adatom incident energy of 0.1eV, Ni–Al intermixing occurred actively at the surfaces of Al(001), Al(011), and Al(111) at 80K and Ni atoms apparently favored the island growth mode irrespective of the Al surface orientation. The highest surface roughness was shown for the case of Al(111) surface. The steering effect, which results in rougher surface, was significantly observed at low incident energy. The steering effect was quantitatively investigated through the extensive measurement of the trajectory and deposition flux of atoms with the variation of incident energy near the artificially structured Ni step positioned on Al surfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
