Abstract
Carrier dynamics in metal-halide perovskites, in particular diffusion, has typically been investigated on micrometer-length scales and above. However, surfaces and interfaces modify the carrier dynamics, e.g., by interface band bending and recombination. To investigate the carrier dynamics and diffusion at the surface, we use time-resolved photoelectron spectroscopy which is sensitive to the photoexcited carriers in the topmost few nm of the material. We extract electron mobilities in well-ordered ${\mathrm{CsPbBr}}_{3}$(001) and ${\mathrm{CsSnBr}}_{3}$(001) films at room temperature of $31\ifmmode\pm\else\textpm\fi{}6$ and $13\ifmmode\pm\else\textpm\fi{}1\phantom{\rule{0.16em}{0ex}}{\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$, respectively. The mobility in ${\mathrm{CsPbBr}}_{3}$(001) increases to $200\ifmmode\pm\else\textpm\fi{}8\phantom{\rule{0.16em}{0ex}}{\mathrm{cm}}^{2}\phantom{\rule{0.16em}{0ex}}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$ at 90 K, indicating strong electron-phonon coupling for electrons at the conduction band minimum. Temperature-dependent photoemission experiments find different phonon coupling mechanisms for high-energetic electrons and holes at the valence band maximum and in the main valence bands.
Published Version
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