Abstract
A new method of surface barrier transmissivity determination isproposed. It is based on the elementary mathematical processing ofemitted electron energy distributions obtained at slightly differentwork function values of the same sample. The basic assumptions are theconstancy of the electron energy distribution before escape intovacuum, and the dependence of the transmissivity only on thedifference of electron energy and the work function value. The methodwas applied to an opaque negative electron affinity GaAs photoemitter,and the energy dependence of the GaAs/Cs/O-vacuum interface barriertransmissivity was obtained. The knowledge of the transmissivity madeit possible to determine the energy distribution of electrons beforetheir escape into vacuum. The latter contains a great number of verylow energy electrons, which can be explained with multiple reflectionsat the GaAs-CsO and CsO-vacuum borders.
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