Surface analyses of the CdSe0.65Te0.35/aqueous polysulfide interface in relation to its photoelectrochemical properties

Abstract

The photocorrosion of n‐Cd(Se,Te) electrodes, in potassium and cesium polysulfide solutions, is investigated by x‐ray photoelectron spectroscopy and Auger electron spectrometry. It is shown that Se and Te are exchanged with sulfur from the solution during photocorrosion, possibly via two separate mechanisms: (a) preferential bleaching of tellurium from the crystal matrix, and (b) uniform photocorrosion of the crystal as a whole. Photocurrent spectrum measurements which are presented suggest that a graded band gap is formed when tellurium is preferentially bleached out of the original Cd(Se,Te) crystal. It is shown that cesium is present on the electrode surface which may explain the negative shift of the flat band potential, i.e., increased open circuit voltage of the photoelectrochemical cell. This suggests that the cesium treatment could be used to increase the open circuit voltage of photovoltaic cells.