Abstract
In this paper, preliminary irradiation effects of glancing incidence gas cluster ion beam (GCIB) for surface activated bonding are reported. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, might be beneficial for surface activated bonding. From XPS analysis, Ar-GCIB irradiation at 70o removed native oxide on Si(100) substrate efficiently. On the contrary, mixing of native oxide by normal incidence GCIB occurred, which caused residual oxide layer formation. The surface roughness at oblique incidence showed lowest value (Ra ~ 0.5 nm) without ripple formations. In addition, Cu-Cu bonding were demonstrated as preliminary results of wafer bonding with GCIB.
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