Abstract
The planarization of the bit-patterned surface using gas cluster ion beams (GCIBs) was studied. By applying the features of gas cluster ions, such as low-energy irradiation and surface smoothing effects, it is possible to carry out effective smoothing of a patterned surface. We fabricated a dot pattern on the Si substrate as a model structure for bit-patterned media by electron beam lithography and inductive coupled plasma etching. A carbon overcoat covered the Si dots. On Ar-GCIB irradiation at an acceleration voltage of 20 kV, the Si dots with a diameter of 150 nm were planarized. The required ion dose for planarization was 5 times 1014 ions/cm2. The cross-sectional transmission electron microscope images showed that only the carbon overcoat layer was planarized without a change in the structure of Si dots. Etching depth of the overcoat increased linearly with the ion dose, indicating good reproducibility of the method with precise control of residual thickness.
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