Abstract
The acoustoelectric effect in GaAs and A l As superlattices is investigated using a separate medium convolver structure. The acoustoelectric interaction in the superlattice is of fundamental interest and may provide the basis for nondestructive characterization of the superlattices and novel devices. The magnitude and polarity of the acoustoelectric voltages exhibit strong temperature and surface acoustic wave (SAW) frequency dependencies. The TAV spectrum exhibits structures at the above GaAs bandgap photon energies. The SAW frequency dependence of the acousto-electric voltages is attributed to generation of elastic waves in the superlattice. Structures in the TAV spectrum are attributed to electronic transitions among valence and conduction band sublevels in the quantum wells. The agreement between these experimentally determined energies and their calculated values is better than one percent.
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