Abstract
ABSTRACTFor the first time, surface acoustic waves (SAWs) were used to study the lattice relaxation of metastable defects. A persistent increase of as much as 0.4% of the SAW velocity at low temperatures was observed after illumination of LT-GaAs; this increase could be quenched by annealing at 120–130°K. This behaviour is caused by the metastable transition of EL2-like AsGa defects and constitutes the direct experimental proof of the illumination induced large lattice relaxation of this defect.
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