Abstract
Heteroepitaxial growth of GaAs on GaP(111)B was demonstrated by liquid phase epitaxy. In order to suppress the generation of rotational twins, initial saturation conditions of GaAs solution contacting with a GaP substrate were investigated at 800°C. Supersaturated and undersaturated solutions caused a number of twins in the grown GaAs layer, while saturated solution led only a few percents in volume. It was concluded that near equilibrium contact is effective to reduce the twins.
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