Abstract
We report on the decrease in photoluminescence (PL) intensity with the increase of the sample temperature (thermal quenching) in crystalline silicon and its suppression after ion irradiation. The crystalline silicon surface was passivated with intrinsic and doped hydrogenated amorphous silicon (a‐Si:H) layer stacks as for making silicon heterojunction solar cell precursors. Low energy argon ion irradiation, in the range between 5 and 17 keV, was used for controlled defect formation either in the thin a‐Si:H top layer or at the interface with the crystalline silicon beneath. The irradiation defects introduce radiative recombination centers in the a‐Si:H as can be measured from PL at low temperature. Moreover, the irradiation and annealing result in a strong modification of the thermal quenching of the PL intensity up to 500 K, showing evidence for the strong reduction of thermally activated non‐radiative recombinations at the amorphous‐crystalline interface. This result can have implications in the field of crystalline silicon surface passivation.
Published Version
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