Abstract
Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgOquantum wells following ion-implantation and rapid thermal annealing, is revealed byphotoluminescence, time-resolved photoluminescence, and band structure calculations. Theimplantation and annealing induces Zn/Mg intermixing, resulting in graded quantum wellinterfaces. This reduces the quantum-confined Stark shift and increases electron–holewavefunction overlap, which significantly reduces the exciton lifetime and increases theoscillator strength.
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