Abstract
Transport properties of ferromagnetic/nonmagnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic-field, temperature, bias, and gate voltage. By designing the magnetic electrodes to have different switching fields, a two-mode device is realized having two stable magnetization states, with the electrodes aligned in parallel and antiparallel. Magnetoresistance of approximately 100% is measured in Co/AlOX/Al/AlOX/Co double tunnel junction spin valves at low bias, with the Al spacer in the superconducting state. The effect is substantially reduced at high bias and temperatures above the TC of the Al. The experimental results are interpreted as due to spin imbalance of charge carriers resulting in suppression of the superconducting gap of the Al island.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
