Abstract

The recently observed helicity-sensitive response, occurring in graphene based field-effect transistors (FETs) is interpreted as a result of the intrinsic phase asymmetry of these devices and interference of plasmons in the FET channel. The graphene-based plasmonic interferometers presented in this work enable the room temperature detection of THz radiation as well as allows us to distinguish between the rotation direction of circular polarized waves. To illustrate the broadband nurture of the observed effects, similar measurements were carried out at both THz and mid-infrared frequencies. The precise control of the carriers type and their concentration throughout the channel length allows us to demonstrate the helicity-sensitive response over a wide range of the gate potentials (from negative to positive values). We experimentally show that the formation of p–n junction inside the graphene channel leads to additional scattering of excited plasma waves, resulting in the suppression of their interference and consequent reduction of the helicity-sensitive contribution.

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