Abstract
In order to decrease interface roughness, BaTiO3 films of 300 nm thickness were deposited by aerosol deposition (AD) process on Pt/Ti/SiO2/Si, Si3N4/Pt/Ti/SiO2/Si, and ZnS/Pt/Ti/SiO2/Si substrates, respectively. As a result, the Si3N4 buffer layer formed flatter interface roughness, and denser BaTiO3 film with hardness of 7.39 GPa, due to its high hardness. This dense BaTiO3 film had lower leakage current compared with the deposited films on Pt and ZnS. In addition, flat interface roughness led to the suppression of Fowler–Nordheim tunneling leakage current.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
