Abstract
In order to decrease interface roughness, BaTiO3 films of 300 nm thickness were deposited by aerosol deposition (AD) process on Pt/Ti/SiO2/Si, Si3N4/Pt/Ti/SiO2/Si, and ZnS/Pt/Ti/SiO2/Si substrates, respectively. As a result, the Si3N4 buffer layer formed flatter interface roughness, and denser BaTiO3 film with hardness of 7.39 GPa, due to its high hardness. This dense BaTiO3 film had lower leakage current compared with the deposited films on Pt and ZnS. In addition, flat interface roughness led to the suppression of Fowler–Nordheim tunneling leakage current.
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