Suppression of floating body effects in SOI–MOSFET studied using nuclear microprobes

Abstract

Suppression of the floating body effects in partially depleted SOI–MOSFETs (silicon-on-insulator metal oxide semiconductor field effect transistors) with and without body contact electrodes has been investigated using nuclear microprobes with currents of 5–250 pA. Transient SOI–MOSFET behavior with and without body contact electrodes during ion irradiation by three-dimensional computer simulation has also been compared with that using nuclear microprobes. The floating body effects were observed in SOI–MOSFETs without body contact electrodes by nuclear microprobe irradiation, while those were suppressed in the SOI–MOSFETs with body contacts.