Abstract
Transport of an electron-hole droplet and the creation of a strain-confined electron-hole liquid in strained Ge doped with a deep impurity Zn were investigated by means of spatial resolution measurements of the recombination luminescence from normal e-h drops as well as a strain-confined large e-h drops under cw-Ar+-laser excitation. A simple drift model is proposed. The drift mobility of an e-h pair composing the droplet decreases from (8.7±0.3)×105 cm2/Vs in pure Ge to (4.5±0.2)×105 cm2/Vs in Zn-doped Ge at 1.8 K. Spatial distribution profiles of free and bound excitons coexisting with e-h drops at 4.2 K are also presented.
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