Suppression of Effects of Backscattering from Drain Region on Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Characteristics

Abstract

We have confirmed for the first time that backscattering from a drain region can markedly be suppressed by increasing the drain thickness of a decanano device. We have also investigated the effects of the backscattering phenomenon on the silicon decanano double-gate metal–oxide–semiconductor field-effect transistor (DG-MOSFET) characteristics. Ensemble Monte Carlo simulation is performed for our numerical experiment. Even if the rate of backscattering from the drain region decreases rapidly with increasing drain thickness, drain current increases only gradually. This gradual increase in drain current is due only to a rapid decrease in drain resistance. The backscattering phenomenon hardly affects DC characteristics, such as drain current. Moreover, when a small incremental change in backscattering rate decreases rapidly with increasing drain thickness, cutoff frequency increases markedly. This marked increase in cutoff frequency is due to both the rapid decrease in drain resistance and the rapid decrease in the small incremental change in backscattering rate. In paricular, the suppression of the backscattering phenomenon markedly improves AC characteristics, such as cutoff frequency. We believe that it becomes more important to analyze the backscattering phenomenon from the drain region along with miniaturization of such a decanano device.