Suppression of buried oxide induced variability on digital performance of GeOI pMOSFETs using substrate bias scheme

Abstract

Random variation in buried oxide thickness strongly affects the digital performance of ultra-thin body germanium-on-insulator MOSFETs. Dependencies of threshold voltage, ON-current, OFF-current and subthreshold slope of ultra-thin body germanium-on-insulator MOSFETs on three different BOX dielectrics are examined by employing well-calibrated Synopsys TCAD. The variation of threshold voltage and ON-current becomes less sensitive with high-k BOX dielectrics whereas smaller variation of OFF-current is observed for the device with low-k BOX dielectrics. The subthreshold slope remains almost unaltered for all BOX dielectrics. Furthermore, a positive substrate bias is found to suppress variability of digital performance parameters of GeOI p-MOSFETs.