Abstract
The main aim of this work is to investigate a simulation study of threshold voltage (V th ) variability induced by statistical parameters fluctuations in 14-nm bulk and silicon-on-insulator (SOI) FinFET structures. In present work, we have studied and explored the influence of various statistical variability sources such as random dopant fluctuations (RDFs), Oxide thickness variation (OTVs), and work function fluctuations (WFVs) on V th performance for both bulk and SOI FinFET structures. The simulation results suggest that the threshold voltage variability in SOI FinFET structure shows ∼32% improvement as compared to bulk FinFET structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
