Suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs with reoxidized nitrided gate oxides

G.Q Lo,W Ting,D.L Kwong

doi:10.1109/vtsa.1991.246701

Suppression of boron penetration in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs with reoxidized nitrided gate oxides

G.Q Lo, W Ting + Show 1 more

https://doi.org/10.1109/vtsa.1991.246701

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Publication Date: May 22, 1991

Affiliation: The University of Texas at Austin

#Suppression Of Boron Penetration #Nitrided Gate Oxides + Show 8 more

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Abstract

The authors report the use of rapid thermal reoxidized nitrided (RTN/RTO) gate oxides in BF/sub 2//sup +/-implanted polysilicon gated p-MOSFETs to achieve excellent barrier properties against the boron penetration. In addition, excellent electrical characteristics including both on- and off-states are demonstrated. Results show that thin RTN/RTO gate oxide is a promising gate dielectric for dual-poly gate CMOS technology development. >

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