Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications

Guenifi N,Larbi M,Rahi Sb

doi:10.35840/2631-5084/5533

Abstract

The present research letter is dedicated to a detailed analysis of a double-gate tunnel field-effect transistor (DG-TFET). The DG-TFET provides improved on-current (ION) than a conventional TFET via band-to-band (B2B) tunneling. However, DG-TFET is disadvantageous for low-power applications because of increased off-current (IOFF) due to the large ambipolar current (Iamb). In this research work, a Si/GaAs/GaAs heterostructure DG-TFET is considered as research base for investigation of device performance.

Highlights

Progress in the development of low power electronics (LPEs) is reviewed by most suitable candidate named, tunneling field effect transistor popularly named Tunnel FET [1,2]
As the gate voltage increases, the the cut-off frequency fT increases to reach its maximum, with increasing Cgg it goes down, when the gate voltage VGS reaches 2.0 V the cut off frequency becomes constant. This is because the on-state current and gm value increase with the electronic B2B tunneling, the cut-off frequency of Hetero is much larger than that of homo, which can be explained by the smaller Cgg of hetero structure double-gate tunnel field-effect transistor (DG-tunnel field effect transistors (TFETs)) and the larger of the gm value
2-D TCAD Silvaco simulations are used to study the impact of heterojunction on the DC, analog and power delay product (PDP)

Summary

Introduction

Progress in the development of low power electronics (LPEs) is reviewed by most suitable candidate named, tunneling field effect transistor popularly named Tunnel FET [1,2]. TFETs devices have emerged as a promising candidate for future low energy electronic circuit and system design This device has attracted attention as a candidate for low-power applications because of its low subthreshold swing (SS) and negligible off-state current (IOFF) compared with the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) [3,4,5,6,7,8]. Current conduction in TFET is governed by bandto-band (B2B) tunneling between valence bands of source to conduction band of channel This B2B tunneling is much more sensitive to material/device parameters such as energy bandgap (EG), dielectric thickness (tox), gate-dielectric materials (κ), effective mass of charge carriers (m*) of tunnel devices, followed by Eq.. When VGS = 0.0 V, the device is in off-state with large tunnel barrier width λ, and the charge carrier, electrons do not have enough energy to move from the valance band of the source to the conduction band of the channel. For hetero and homo structured double gate TFET, tunneling with λ, 0.05 μm and 0.056 μm is obtained during simulation respectively

Result and Discussion

Conclusion