A novel double gate tunnel field effect transistor with 9 mV/dec average subthreshold slope

Seyed Ebrahim Hosseini,Saeid Marjani

doi:10.1109/iraniancee.2014.6999572

A novel double gate tunnel field effect transistor with 9 mV/dec average subthreshold slope

Seyed Ebrahim Hosseini, Saeid Marjani

https://doi.org/10.1109/iraniancee.2014.6999572

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Publication Date: May 1, 2014

Citations: 18

Affiliation: Ferdowsi University of Mashhad

#Double Gate Tunnel Field Effect Transistor #Double Gate Tunnel Field Effect + Show 8 more

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Abstract

In this paper, a novel double gate tunnel field effect transistor (DGTFET) configuration with p+-layer in the channel is proposed and investigated. The proposed structure is a Si-channel DGTFET, which has a p+-layer in the channel connected to the P+ source region in order to achieve improved switching and higher ON-current when compared to a conventional TFET. The simulation results of DGTFET with p+-layer in the channel shows excellent characteristics with high I ON /I OFF ratio (about 5×1012) and an average subthreshold slope of about 9 mV/decade over 4 decades of current at room temperature. Results suggest that, the DGTFET with p+-layer in the channel seem to be the most optimal ones to replace MOSFET for ultralow power applications and switching devices.

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