Abstract
Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.
Highlights
High-brightness GaN-based light-emitting diodes (LEDs) are used in a wide variety of applications [1,2]
There were two kinds of bottom GaN (B-GaN): (1) B3-GaN (GaN grown among three micron-sized patterns) and (2) B2-GaN
It is reasonable to assume that the mass transport was the same for all the samples as GaN was grown in the same conditions
Summary
High-brightness GaN-based light-emitting diodes (LEDs) are used in a wide variety of applications [1,2]. Sulfuric–phosphoric acid was used to modify the micron-sized patterns in order to suppress the growth of sidewall GaN. The effect of this modification on the growth mechanism of. Two kinds of PSS samples were used to investigate the effect of modification of micron-sized PSS patterns on the GaN growth mechanism: (1) RPSS 1, two kinds of PSS samples were used to investigate effect of modification of PSS patterns on the GaN growth mechanism: (1) AlNR PSS samples used to investigate the effect of modification of PSS patterns on the GaN growth mechanism: (1) AlNR (RPSS with AlN NL);
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