Abstract
GaN-based light-emitting diodes (LEDs) coated with an Al mirror and a three-pair TiO2/Al2O3 distributed Bragg reflector (DBR) by atomic layer deposition (ALD) grown on a patterned sapphire substrate (PSS) were proposed and realized for the first time. A 43.1% enhancement in light output power (LOP) was realized at 60 mA with the LED coated with an Al mirror and a three-pair ALD-grown TiO2/Al2O3 DBR compared with the LED without a backside reflector, as well as a 10.7% enhancement compared with the LED with a conventional Al mirror and a three-pair TiO2/SiO2 DBR reflector.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
