Suppressed phase separation in thick GaInAsSb layers across the compositional range grown by molecular beam epitaxy for 1.7–4.9 μm infrared materials

Abstract

Thick 2 um Ga1-xInxAsySb1-y layers lattice-matched to (100)-GaSb were grown by molecular beam epitaxy across the compositional range x = 0 to 1. By lowering the growth temperature to the 410 – 450 C range, phase separation was suppressed throughout the miscibility gap, as evidenced in measurements such as photoluminescence, high-resolution x-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. Bright photoluminescence was recorded in the sample series ranging from 1.7 to 4.9 ums.