Abstract
The charge trapping behaviors of ammonium poly-sulfide, (NH4)2Sx, passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric and DC-sputtered TiN gate electrode are investigated and compared with those of GaN MOS device with hydrochloric acid, HCl, passivation. Compared to non-S passivated device, higher peak capacitance (>20% @1MHz), reduced frequency dispersion (~30% ↓), lower hysteresis (~34% ↓), higher breakdown (1.3×), lower stress induced flat-band voltage (VFB) shift (~30% ↓), and lower interface state density (Dit), stronger immunity Dit generation (ΔDit) against gate bias voltage are attained with S-passivated device. Further improved characteristics are observed with post deposition annealing at 400°C for 10min. These behaviors are mainly attributed to higher bond strength energy of SO and SN than those of ClO and ClN bonds.
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